Interfacial Composition and Microstructure of Fe3O4 Magnetic Tunnel Junctions

نویسندگان

  • Chando Park
  • Yiming Shi
  • Yingguo Peng
  • Katayun Barmak
  • Jian-Gang Zhu
  • David E. Laughlin
  • Robert M. White
چکیده

Magnetic tunnel junctions with an Fe3O4 top electrode have been fabricated. High resolution transmission electron microscopy (HRTEM) shows that in as-deposited state, Fe and FeO phases exist at the interface. These two phases are believed to have formed as a result of the unstable plasma condition at the start of the Fe3O4 deposition. A relatively low magnetoresistance ratio (MR) (3.5%) and low switching field (HC2) (40 Oe) is observed which is associated with the fact that the FeO phase magnetically isolates the Fe phase from the Fe3O4 phase at the interface. After annealing at 150 C for 5 h, the MR as well as the switching field (HC2) increases by a factor of two. HRTEM shows that the FeO phase at the interface has transformed into Fe and Fe3O4 in the annealed sample, resulting in the increased MR (7.0%) and higher switching field (HC2) (300 Oe). However, annealing does not completely remove Fe at the interface, thereby limiting the MR.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Characterization of interfacial reactions in magnetite tunnel junctions with transmission electron microscopy

To make a uniform AlOx barrier layer in tunnel junctions, a thin layer of Al is often sputtered first and then oxidized. In this study, we sputtered a thick layer of Al onto Fe3O4 and then employed high resolution transmission electron microscopy and x-ray energy dispersive spectroscopy to investigate the interfacial microstructures. Two new layers have been found and investigated at the Al/Fe3...

متن کامل

Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-dependent interfacial anisotropy, the critical density may reduce down to a very low level (~10(4) A c...

متن کامل

Magnetic Tunnel Junctions With Co:TiO Magnetic Semiconductor Electrodes

Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO magnetic semiconductor. The Co:TiO layers (0 to 1 nm thick) are inserted at the SrTiO Co interface in La Sr MnO SrTiO Co tunnel junctions. For all junctions we find a negative tunnel magnetoresistance, which decreases upon the insertion of Co:TiO , while the junction resista...

متن کامل

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier lay...

متن کامل

Thermoelectricity and disorder of FeCo/MgO/FeCo magnetic tunnel junctions

We compute the thermoelectric transport parameterized by the Seebeck coefficient and thermal/electric conductance of random-alloy FeCo/MgO/FeCo(001) magnetic tunnel junctions (MTJs) from first principles using a generalized Landauer-Büttiker formalism. The thermopower is found to be typically smaller than those of Fe/MgO/Fe(001) MTJs. The (magneto-)Seebeck effect is sensitive to the details of ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2001